MOSFETs 650V Vds; 30V Vgs TO-247AC Vishay Siliconix SIHG80N60EF-GE3
Hãng sản xuất: Vishay Siliconix Model: SIHG80N60EF-GE3 - Liên hệ
Gọi để có giá tốt
TP. Hà Nội: (024) 35.381.269
TP. Đà Nẵng: (023) 63.747.711
TP. Bắc Ninh: (0222)730.39.68
TP. HCM: (028) 38.119.636
Fall Time: 168 ns
Rise Time: 144 ns
Technology: Si
Unit Weight: 6 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 400 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 520 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 59 ns
Typical Turn-Off Delay Time: 272 ns
Id - Continuous Drain Current: 80 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 25 S
Rds On - Drain-Source Resistance: 32 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 2 V
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