MOSFETs N-Ch 120V 120A I2PAK-3 OptiMOS 3 Infineon IPI041N12N3 G
Hãng sản xuất: Infineon Model: IPI041N12N3 G - Liên hệ
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TP. Hà Nội: (024) 35.381.269
TP. Đà Nẵng: (023) 63.747.711
TP. Bắc Ninh: (0222)730.39.68
TP. HCM: (028) 38.119.636
Width: 4.5 mm
Height: 9.45 mm
Length: 10.2 mm
Fall Time: 21 ns
Rise Time: 52 ns
Technology: Si
Unit Weight: 2.387 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 211 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 35 ns
Typical Turn-Off Delay Time: 70 ns
Id - Continuous Drain Current: 120 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 83 S
Rds On - Drain-Source Resistance: 3.2 mOhms
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs th - Gate-Source Threshold Voltage: 2 V
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